1/4 STPS80150Cw october 2003 - ed: 1a high voltage power schottky rectifier ? dual center tap schottky rectifiers suited for high frequency switch mode power supply. packaged in to-247, this devices is intended for use to enhance the reliability of the application. description n high junction temperature capability n low leakage current n good trade off between leakage current and forward voltage drop n low thermal resistance n high frequency operation features and benefits symbol parameter value unit v rrm repetitive peak reverse voltage 150 v i f(rms) rms forward current 80 a i f(av) average forward current tc = 150c d = 0.5 per diode per device 40 80 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 500 a p arm repetitive peak avalanche power tp = 1s tj = 25c 38200 w t stg storage temperature range - 65 to + 175 c tj maximum operating junction temperature * 175 c dv/dt critical rate of rise of reverse voltage 10000 v/s absolute ratings (limiting values, per diode) i f(av) 2x40a v rrm 150 v tj (max) 175c v f (max) 0.74 v major products characteristics a1 k a2 to-247 *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink a1 k a2
STPS80150Cw 2/6 symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25c v r =v rrm 530a tj = 125c 620ma v f * forward voltage drop tj = 25 ci f =40a 0.8 0.84 v tj = 125c i f =40a 0.68 0.74 tj=25 ci f =80a 0.9 0.96 tj = 125c i f =80a 0.8 0.86 pulse test : * tp = 380 m s, d <2% to evaluate the conduction losses use the following equation: p=0.62xi f(av) + 0.003 i f 2 (rms) static electrical characteristics (per diode) symbol parameter value unit r th(j-c) junction to case per diode total 0.7 0.5 c/w r th(j-c) junction to case coupling 0.3 c/w thermal resistances when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) p (w) f(av) 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 i (a) f(av) t d =tp/t tp d = 1 d = 0.05 d = 0.1 d = 0.2 d = 0.5 fig. 1: conduction losses versus average current (per diode). 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (s) p p(t) p (1s) arm p arm fig. 2: normalized avalanche power derating versus pulse duration. 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 t (c) j p(t) p (25c) arm p arm fig. 3: normalized avalanche power derating versus junction temperature. i (a) f(av) 0 5 10 15 20 25 30 35 40 45 0 25 50 75 100 125 150 175 t (c) amb t d =tp/t tp r=r th(j-a) th(j-c) r =15c/w th(j-a) fig. 4: average forward current versus ambient temperature ( d =0.5, per diode).
STPS80150Cw 3/4 i (a) m 0 50 100 150 200 250 300 350 400 450 500 1.e-03 1.e-02 1.e-01 1.e+00 i m t d =0.5 t(s) t =75c c t =125c c t =50c c fig. 5: non repetitive surge peak forward current versus overload duration (maximum values, per diode). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 z/r th(j-c) th(j-c) d = 0.5 d = 0.2 d = 0.1 single pulse t d =tp/t tp t (s) p fig. 6: relative variation of thermal impedance junction to case versus pulse duration. i (a) r 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 1.e+04 1.e+05 10 30 50 70 90 110 130 150 v (v) r t =125c j t =150c j t =100c j t =50c j t =25c j t =75c j fig. 7: reverse leakage current versus reverse voltage applied (typical values, per diode). 100 1000 10000 1 10 100 1000 c(pf) v (v) r f=1mhz v =30mv t =25c osc rms j fig. 8: junction capacitance versus reverse voltage applied (typical values, per diode). i (a) fm 0.1 1.0 10.0 100.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v (v) fm t =25c (maximum values) j t =125c (maximum values) j t =125c (typical values) j fig. 9: forward voltage drop versus forward current (per diode).
4/4 STPS80150Cw information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not au- thorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2003 stmicroelectronics - all rights reserved. stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states www.st.com n cooling method : c n recommended torque value : 0.8m.n n maximum torque value : 1.0m.n package mechanical data to-247 f2 f1 v2 l4 l2 l1 l3 d l l5 me h v v a dia. f3 f4 g = = f(x3) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f1 3.00 0.118 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 f4 3.00 3.40 0.118 0.133 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143 ordering type marking package weight base qty delivery mode STPS80150Cw STPS80150Cw to-247 4.4g 30 tube n epoxy meets ul94,v0
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